Silicon photonics based module for storing cryptocurrency and executing peer-to-peer transaction

ABSTRACT

The present invention provides an integrated system-on-chip device. The device is configured on a single silicon substrate member. The device has a data input/output interface provided on the substrate member. The device has an input/output block provided on the substrate member and coupled to the data input/output interface. The device has a signal processing block provided on the substrate member and coupled to the input/output block. The device has a driver module provided on the substrate member and coupled to the signal processing block. The device further includes a driver interface and coupled to the driver module and configured to be coupled to a silicon photonics device. In an example, a control block is configured to receive and send instruction(s) in a digital format to the communication block and is configured to receive and send signals in an analog format to communicate with the silicon photonics device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.15/810,641, filed Nov. 13, 2017, which is a continuation of U.S.application Ser. No. 15/408,280, filed Jan. 17, 2017, now U.S. Pat. No.9,846,674, which is a continuation of U.S. application Ser. No.14/311,004, filed Jun. 20, 2014, now U.S. Pat. No. 9,547,622, whichclaims the priority benefit of U.S. Provisional Application No.61/845,325, filed Jul. 11, 2013 and U.S. Provisional Application No.61/842,337, filed Jul. 2, 2013, commonly assigned and incorporated byreference herein for all purposes.

BACKGROUND OF THE INVENTION

The present invention relates to telecommunication techniques. Moreparticularly, the present invention provides a single-chip controlmodule or device for an integrated system-on-a-chip configured incommunication network and methods thereof.

Over the last few decades, the use of communication networks exploded.In the early days Internet, popular applications were limited to emails,bulletin board, and mostly informational and text-based web pagesurfing, and the amount of data transferred was usually relativelysmall. Today, Internet and mobile applications demand a huge amount ofbandwidth for transferring photo, video, music, and other multimediafiles. For example, a social network like Facebook processes more than500 TB of data daily. With such high demands on data and data transfer,existing data communication systems need to be improved to address theseneeds.

Over the past, there have been many types of communication systems andmethods. Unfortunately, they have been inadequate for variousapplications. Therefore, improved methods and systems for optimizingoptical communication devices are desired. In particular, a system forstoring cryptocurrency wallet and application data securely in theoptical layer and a method for communicating the application datathrough a peer to peer transaction via optical interface are disclosed.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to telecommunication techniques. Morespecifically, various embodiments of the present invention provide acommunication interface that is configured to transfer data at highbandwidth over optical communication networks. In certain embodiments,the communication interface is used by various devices, such as spineswitches and leaf switches, within a spine-leaf network architecture,which allows large amount of data to be shared among servers.Additionally, a system and method using the Silicon Photonics basedoptical module for storing cryptocurrency and implementing securecommunications for peer-to-peer transactions over optical networks aredisclosed.

In modern electrical interconnect systems, high-speed serial links havereplaced parallel data buses, and serial link speed is rapidlyincreasing due to the evolution of CMOS technology. Internet bandwidthdoubles almost every two years following Moore's Law. But Moore's Law iscoming to an end in the next decade. Standard CMOS silicon transistorswill stop scaling around 5 nm. And the internet bandwidth increasing dueto process scaling will plateau. But Internet and mobile applicationscontinuously demand a huge amount of bandwidth for transferring photo,video, music, and other multimedia files. This disclosure describestechniques and methods to improve the communication bandwidth beyondMoore's law.

Serial link performance is limited by the channel electrical bandwidthand the electronic components. In order to resolve the inter-symbolinterference (ISI) problems caused by bandwidth limitations, we need tobring all electrical components as close as possible to reduce thedistance or channel length among them. Stacking chips into so-called 3-DICs promises a one-time boost in their capabilities, but it's veryexpensive. Another way to achieve this goal in this disclosure is to usemultiple chip module technology.

In an example, an alternative method to increase the bandwidth is tomove the optical devices close to electrical device. Silicon photonicsis an important technology for moving optics closer to silicon. In thispatent application, we will disclose a high speed electrical opticsmultiple chip module device to achieve terabits per second speed, aswell as variations thereof.

In an alternative example, the present invention includes an integratedsystem-on chip-device. The device is configured on a single siliconsubstrate member. The device has a data input/output interface providedon the silicon substrate member and configured for a predefined datarate and protocol. The device has an input/output block provided on thesilicon substrate member and coupled to the data input/output interface.In an example, the input/output block comprises aSerializer/Deserializer (SerDes) block, a clock data recovery (CDR)block, a compensation block, and an equalizer block, among others. Thedevice has a signal processing block provided on the silicon substratemember and coupled to the input/output block. In an example, the signalprocessing block is configured to the input/output block using abi-direction bus in an intermediary protocol. The device has a drivermodule provided on the silicon substrate member and coupled to thesignal processing block. In an example, the driver module is coupled tothe signal processing blocking using a uni-directional multi-lane bus.In an example, the device has a driver interface provided on the siliconsubstrate member and coupled to the driver module and configured to becoupled to a silicon photonics device. In an example, the driverinterface is configured to transmit output data in either an amplitudemodulation format or a combination of phase/amplitude modulation formator a phase modulation format. In an example, the device has a receivermodule comprising a transimpedance amplifier (TIA) block provided on thesilicon substrate member and to be coupled to the silicon photonicsdevice using predefined modulation format, and configured to couple tothe digital signal processing block to communicate information to theinput output block for transmission through the data input/outputinterface. In an example, the device has a communication block providedon the silicon substrate member and operably coupled to the input/outputblock, the digital signal processing block, the driver module, and thereceiver module, among others. The device has a communication interfacecoupled to the communication block. The device has a control blockprovided on the silicon substrate member and coupled to thecommunication block.

In an example, the signal processing block comprises a forward errorcorrection (FEC) block, a digital signal processing block, a framingblock, a protocol block, and a redundancy block, among others. Thedriver module is selected from a current drive or a voltage driver in anexample. In an example, the driver module is a differential driver orthe like. In an example, the silicon photonics device is selected froman electro absorption modulator (EAM) or electro optic modulator (EOM),or a Mach-Zehnder modulator (MZM). In an example, the amplifiedmodulation format is selected from non-return to zero (NRZ) format orpulse amplitude modulation (PAM) format. In an example, the phasemodulation format is selected from binary phase shift keying (BPSK) ornPSK. In an example, the phase/amplitude modulation is quad amplitudemodulation (QAM). In an example, the silicon photonic device isconfigured to convert the output data into an output transport data in awave division multiplexed (WDM) signal. In an example, the control blockis configured to initiate a laser bias or a modulator bias. In anexample, the control block is configured for laser bias and powercontrol of the silicon photonics device. In an example, the controlblock is configured with a thermal tuning or carrier tuning device eachof which is configured on the silicon photonics device. In an example,the SerDes block is configured to convert a first data stream of N intoa second data stream of M.

In an example, the invention provides an integrated system-on-chipdevice. The device has a single silicon substrate member and a datainput/output interface provided on the substrate member and configuredfor a predefined data rate and protocol. In an example, the device hasan input/output block provided on the silicon substrate member andcoupled to the data input/output interface. The input/output blockcomprises a SerDes block, a CDR block, a compensation block, and anequalizer block, among others. The device has a signal processing blockprovided on the substrate member and coupled to the input/output block.In an example, the signal processing block is configured to theinput/output block using a bi-direction bus in an intermediary protocol.In an example, the device has a driver module provided on the substratemember and coupled to the signal processing block. The driver module iscoupled to the signal processing blocking using a uni-directionalmulti-lane bus. In an example, the device has a driver interfaceprovided on the substrate member and coupled to the driver module andconfigured to be coupled to a silicon photonics device. The driverinterface is configured to transmit output data in either an amplitudemodulation format or a combination of phase/amplitude modulation formator a phase modulation format in an example. The device has a receivermodule comprising a TIA block provided on the substrate member and to becoupled to the silicon photonics device using predefined modulationformat, and configured to the digital signal processing block tocommunicate information to the input output block for transmissionthrough the data input/output interface. In an example, the device has acommunication block provided on the substrate member and operablycoupled to the input/output block and the digital signal processingblock, the driver block, and the receiver block, and others, althoughthere may be variations. In an example, the device has a communicationinterface coupled to the communication block and a control blockprovided on the substrate member and coupled to the communication block.In an example, the control block is configured to receive and sendinstruction(s) in a digital format to the communication block and beingconfigured to receive and send signals in an analog format tocommunicate with the silicon photonics device.

In an example, the present invention provides a monolithicallyintegrated system-on-chip device configured for a multi-rate andselected format of data communication. In an example, the device has asingle silicon substrate member. The device has a data input/outputinterface provided on the substrate member and configured for apredefined data rate and protocol. In an example, the data input/outputinterface is configured for number of lanes numbered from four to onehundred and fifty. The device has an input/output block provided on thesubstrate member and coupled to the data input/output interface, whichhas a SerDes block, a CDR block, a compensation block, and an equalizerblock. In an example, the SerDes block is configured to convert a firstdata stream of N into a second data stream of M. In an example, each ofthe first data stream has a first predefined data rate at a first clockrate and each of the second data stream having a second predefined datarate at a second clock rate. As used herein the terms “first” and“second” do not necessarily imply order and shall be construed broadlyaccording to ordinary meaning. In an example, the device has a signalprocessing block provided on the substrate member and coupled to theinput/output block. The signal processing block is configured to theinput/output block using a bi-direction bus in an intermediary protocolin an example. The device has a driver module provided on the substratemember and coupled to the signal processing block. In an example, thedriver module is coupled to the signal processing blocking using auni-directional multi-lane bus. In an example, the device has a driverinterface provided on the substrate member and coupled to the drivermodule and configured to be coupled to a silicon photonics device. In anexample, the driver interface is configured to transmit output data ineither an amplitude modulation format or a combination ofphase/amplitude modulation format or a phase modulation format. Thedevice has a receiver module comprising a TIA block provided on thesubstrate member and to be coupled to the silicon photonics device usingpredefined modulation format, and is configured to the digital signalprocessing block to communicate information to the input output blockfor transmission through the data input/output interface. In an example,the device has a communication block provided on the substrate memberand operably coupled to the input/output block, the digital signalprocessing block, the driver block, and the receiver block, and others,although there can be variations. In an example, the device has acommunication interface coupled to the communication block and a controlblock provided on the substrate member and coupled to the communicationblock.

In an example, the present invention provides a monolithicallyintegrated system-on-chip device configured for a multi-rate andselected format of data communication. In an example, the device has asingle silicon substrate member. The device has a data input/outputinterface provided on the substrate member and configured for apredefined data rate and protocol. In an example, the data input/outputinterface is configured for number of lanes numbered from four to onehundred and fifty, although there can be variations. In an example, thedevice has an input/output block provided on the substrate member andcoupled to the data input/output interface. In an example, theinput/output block comprises a SerDes block, a CDR block, a compensationblock, and an equalizer block, among others. In an example, the SerDesblock is configured to convert a first data stream of X into a seconddata stream of Y, where X and Y are different integers. Each of thefirst data stream has a first predefined data rate at a first clock rateand each of the second data stream has a second predefined data rate ata second clock rate in an example. In an example, the device has asignal processing block provided on the substrate member and coupled tothe input/output block. In an example, the signal processing block isconfigured to the input/output block using a bi-direction bus in anintermediary protocol. In an example, the device has a driver moduleprovided on the substrate member and coupled to the signal processingblock. In an example, the driver module is coupled to the signalprocessing blocking using a uni-directional multi-lane bus configuredwith N lanes, whereupon N is greater than M such that a differencebetween N and M represents a redundant lane or lanes. In an example, thedevice has a mapping block configured to associate the M lanes to aplurality of selected laser devices for a silicon photonics device. Thedevice also has a driver interface provided on the substrate member andcoupled to the driver module and configured to be coupled to the siliconphotonics device. In an example, the driver interface is configured totransmit output data in either an amplitude modulation format or acombination of phase/amplitude modulation format or a phase modulationformat. In an example, the device has a receiver module comprising a TIAblock provided on the substrate member and to be coupled to the siliconphotonics device using predefined modulation format, and configured tothe digital signal processing block to communicate information to theinput output block for transmission through the data input/outputinterface. The device has a communication block provided on thesubstrate member and operably coupled to the input/output block, thedigital signal processing block, the driver block, and the receiverblock, among others. The device has a communication interface coupled tothe communication block and a control block provided on the substratemember and coupled to the communication block.

In an example, the present disclosure provides an integrated single-chipcontrol device for communicating with the silicon photonics device. Theintegrated single-chip control device includes a silicon substratemember and a data input/output interface provided on the siliconsubstrate member and configured for a predefined data rate and protocoland an input/output block provided on the silicon substrate member andcoupled to the data input/output interface. The input/output blockincludes a transmitting block for a very-short-reach (VSR) network hostand a receiving block for the VSR host. Additionally, the integratedsingle-chip control device includes a signal processing block providedon the silicon substrate member and coupled to the input/output blockusing a bi-direction bus in an intermediary protocol. Further, theintegrated single-chip control device includes a driver module providedon the silicon substrate member and coupled to the signal processingblock using a uni-directional multi-lane bus and a driver interfaceprovided on the silicon substrate member and coupled to the drivermodule and configured to be coupled to a silicon photonics device. Thedriver interface is configured to transmit output data in an amplitudemodulation format. Furthermore, the integrated single-chip controldevice includes a receiver module provided on the silicon substratemember and to couple to the silicon photonics device using predefinedmodulation format to receive information converted from optical signalsand configured to couple to the signal processing block to communicateinformation to the input/output block for transmission through the datainput/output interface. Moreover, the integrated single-chip controldevice further includes a communication block provided on the siliconsubstrate member and operably coupled to the input/output block, thesignal processing block, the driver module, and the receiver module formultiple series communications and a communication interface coupled tothe communication block.

In an example, the present invention provides an integratedsystem-on-chip device having a self test using a loop back technique. Inan example, the device has a self-test block provided on the substrate,the self test block being configured to receive a loop back signal fromat least one of the digital signal processing block, the driver module,or the silicon photonics device. In an example, the self test blockcomprises a variable output power switch configured to provide a stressreceiver test from the loop back signal.

In an example, the invention provides an integrated system-on-chipdevice having a redundant laser or lasers configured for each channel.In an example, the device has a plurality of laser devices configured onthe silicon photonics device. At least a pair of laser devices isassociated with a channel and coupled to a switch to select one of thepair of laser devices to be coupled to an optical multiplexer to providefor a redundant laser device.

In an example, the present invention provides an integratedsystem-on-chip device having a built-in self test technique. In anexample, the device has a self test block configured on the siliconphotonics device and to be operable during a test operation. In anexample, the self test block comprises a broad band source configured toemit electromagnetic radiation from 1200 nm to 1400 nm or 1500 to 1600nm to a multiplexer device. In an example, the broad band source can bean LED or other suitable device. The device also includes a self testoutput configured to a spectrum analyzer device external to the siliconphotonics device.

In another aspect, the present disclosure provides an optical module forcommunicating a peer to peer transaction to transmit cryptocurrency. Theoptical module includes a substrate member, a memory resource, and acryptocurrency wallet provided on the memory resource. Additionally, theoptical module includes an optical communication block with adirect-to-cloud interface for connecting to one or more entities in acloud infrastructure. Furthermore, the optical module includes anapplication block to enable a cryptocurrency transaction via thedirect-to-cloud interface. Moreover, the optical module includes anexternal interface connecting the application block to a physical layer.In an embodiment, the optical module is configured to be an opticalQuantum Key Generation Distribution device using a quantum keygeneration encryption protocol to encrypt a private key protectedtransaction in an encrypted transaction envelope. The optical module isconfigured to be a portable device with one of pluggable modules ofQSFP, SFF, OSFP, and CFP, carrying a hardware level encryptedcryptocurrency wallet for timely execution of peer to peer transaction.

In an alternative embodiment, the present disclosure provides a methodfor communicating a peer to peer transaction to transmit cryptocurrencyin an optical communication network. The method includes providing afirst silicon photonics based optical module associated with a hosthaving a public key. The first silicon photonics based optical moduleincludes a substrate member; a memory resource; a cryptocurrency walletwith a first private key provided on the memory resource; an opticalcommunication block with a direct-to-cloud interface for connecting toone or more entities in a cloud infrastructure; an application block toenable a cryptocurrency transaction via the direct-to-cloud interface;and an external interface connecting the application block to a physicallayer. The method further includes connecting the first siliconphotonics based optical module to the cloud infrastructure using theoptical communication block via a public key. A second silicon photonicsbased optical module associated with a client is connected to the cloudinfrastructure. The second silicon photonics based optical module issubstantially the same as the first silicon photonics based opticalmodule and has a cryptocurrency wallet with a second private key.Additionally, the method includes transferring an optical signal withinformation of the cryptocurrency transaction with an encrypted envelopefrom the cryptocurrency wallet in the first silicon photonics basedoptical module to the cloud infrastructure. Furthermore, the methodincludes receiving the optical signal from the cloud infrastructure todecrypt the crypotcurrency transaction via the public key by the secondsilicon photonics based optical module. Moreover, the method includesstoring information of the cryptocurrency transaction into thecryptocurrency wallet in the second silicon photonics based opticalmodule via the second private key.

The present invention achieves these benefits and others in the contextof known memory technology. However, a further understanding of thenature and advantages of the present invention may be realized byreference to the latter portions of the specification and attacheddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following diagrams are merely examples, which should not undulylimit the scope of the claims herein. One of ordinary skill in the artwould recognize many other variations, modifications, and alternatives.It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this process andscope of the appended claims.

FIG. 1 is a simplified diagram of a single hybrid die (Both electricaland optics devices are fabricated on a single hybrid die) according toan embodiment of the present invention.

FIG. 2 is a simplified diagram of a multi-chip module according to anembodiment of the present invention.

FIG. 2A is a simplified diagram of an exemplary hybrid silicon photonicsdevice.

FIG. 3 is a simplified diagram of an electrical silicon die blockaccording to an embodiment of the present invention.

FIG. 4 is a simplified diagram of high speed serial link block accordingto an embodiment of the present invention.

FIG. 5 is a simplified diagram of a digital processing/signalpre-distortion block according to an embodiment of the presentinvention.

FIG. 6 is a simplified diagram of an electrical laser driver and TIAblock diagram according to an embodiment of the present invention.

FIG. 7 is a simplified diagram of a silicon photonic block diagramaccording to an embodiment of the present invention.

FIG. 8 is a simplified block diagram of a multi-chip module for siliconphotonics according to an embodiment of the present invention.

FIG. 9 is a simplified block diagram of data flow according to anembodiment of the present invention.

FIG. 10 is a simplified diagram illustrating a redundant laserconfiguration at a drive stage according to an embodiment of the presentinvention.

FIG. 11 is a simplified diagram illustrating a built-in self test usingan optical loop back according to an embodiment of the presentinvention.

FIG. 12 is a simplified diagram illustrating a built-in self testconfigured for optical testing according to an embodiment of the presentinvention.

FIG. 13 is a simplified diagram illustrating a variable bias for opticalelements configured within a silicon photonic device according to anembodiment of the present invention.

FIG. 14 is a simplified diagram illustrating wavelength tuningconfigured to silicon photonic device according to an embodiment of thepresent invention.

FIG. 15 is a simplified block diagram of an integrated single-chipcontrol device for communicating with a silicon photonics device in anetwork system according to an embodiment of the present invention.

FIG. 16 is an example of applying the single-chip control device (Vega)of FIG. 15 in the back plane connection of a network system according toan embodiment of the present invention.

FIG. 17 is a simplified diagram illustrating a cryptocurrency system forcommunicating settlement transactions according to an embodiment of thepresent invention.

FIG. 18 is a schematic diagram illustrating system and method includinga Silicon Photonics based optical module for communicating peer-to-peertransaction according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

This present invention relates to telecommunication techniques. Morespecifically, various embodiments of the present invention provide acommunication interface that is configured to transfer data at highbandwidth over optical communication networks. In certain embodiments,the communication interface is used by various devices, such as spineswitches and leaf switches, within a leaf-spine network architecture,which allows large amount of data to be shared among servers. In someembodiments, a single Silicon Photonics based optical module configuredas a receiving optical transceiver as well as a transmitting opticaltransceiver can be integrated via the communication interface totransfer data at high bandwidth over optical communication networks.Specifically, a system and a method using the Silicon Photonics basedoptical module for storing cryptocurrency and implementing securecommunications for peer-to-peer transactions are disclosed.

In the last decades, with advent of cloud computing and data center, theneeds for network servers have evolved. For example, the three-levelconfiguration that have been used for a long time is no longer adequateor suitable, as distributed applications require flatter networkarchitectures, where server virtualization that allows servers tooperate in parallel. For example, multiple servers can be used togetherto perform a requested task. For multiple servers to work in parallel,it is often imperative for them to be share large amount of informationamong themselves quickly, as opposed to having data going back forththrough multiple layers of network architecture (e.g., network switches,etc.).

Leaf-spine type of network architecture is provided to better allowservers to work in parallel and move data quickly among servers,offering high bandwidth and low latencies. Typically, a leaf-spinenetwork architecture uses a top-of-rack switch that can directly accessinto server nodes and links back to a set of non-blocking spine switchesthat have enough bandwidth to allow for clusters of servers to be linkedto one another and share large amount of data.

In a typical leaf-spine network today, gigabits of data are shared amongservers. In certain network architectures, network servers on the samelevel have certain peer links for data sharing. Unfortunately, thebandwidth for this type of set up is often inadequate. It is to beappreciated that embodiments of the present invention utilizes PAM(e.g., PAM8, PAM12, PAM16, etc.) in leaf-spine architecture that allowslarge amount (up terabytes of data at the spine level) of data to betransferred via optical network.

The following description is presented to enable one of ordinary skillin the art to make and use the invention and to incorporate it in thecontext of particular applications. Various modifications, as well as avariety of uses in different applications will be readily apparent tothose skilled in the art, and the general principles defined herein maybe applied to a wide range of embodiments. Thus, the present inventionis not intended to be limited to the embodiments presented, but is to beaccorded the widest scope consistent with the principles and novelfeatures disclosed herein.

In the following detailed description, numerous specific details are setforth in order to provide a more thorough understanding of the presentinvention. However, it will be apparent to one skilled in the art thatthe present invention may be practiced without necessarily being limitedto these specific details. In other instances, well-known structures anddevices are shown in block diagram form, rather than in detail, in orderto avoid obscuring the present invention.

The reader's attention is directed to all papers and documents which arefiled concurrently with this specification and which are open to publicinspection with this specification, and the contents of all such papersand documents are incorporated herein by reference. All the featuresdisclosed in this specification, (including any accompanying claims,abstract, and drawings) may be replaced by alternative features servingthe same, equivalent or similar purpose, unless expressly statedotherwise. Thus, unless expressly stated otherwise, each featuredisclosed is one example only of a generic series of equivalent orsimilar features.

Furthermore, any element in a claim that does not explicitly state“means for” performing a specified function, or “step for” performing aspecific function, is not to be interpreted as a “means” or “step”clause as specified in 35 U.S.C. Section 112, Paragraph 6. Inparticular, the use of “step of” or “act of” in the Claims herein is notintended to invoke the provisions of 35 U.S.C. 112, Paragraph 6.

Please note, if used, the labels left, right, front, back, top, bottom,forward, reverse, clockwise and counter clockwise have been used forconvenience purposes only and are not intended to imply any particularfixed direction. Instead, they are used to reflect relative locationsand/or directions between various portions of an object.

FIG. 1 is a simplified diagram of a single hybrid die (Both electricaland optics devices are fabricated on a single hybrid die) according toan embodiment of the present invention. In an example, the presentdevice comprises a single hybrid communication module made of siliconmaterial. The module comprises a substrate member having a surfaceregion, an electrical silicon chip overlying a first portion of thesurface region, a silicon photonics device overlying a second portion ofthe surface region, a communication bus coupled between the electricalsilicon chip and the silicon photonics device, an optical interfacecoupled to the silicon photonics device, and an electrical interfacecoupled to the electrical silicon die.

FIG. 2 is a simplified diagram of a multi-chip module according to anembodiment of the present invention. In an example, the present devicecomprises a single hybrid communication module. The module comprises asubstrate member having a surface region, which can be a printed circuitboard or other member. The module comprises an electrical silicon chipoverlying a first portion of the surface region, a silicon photonicsdevice overlying a second portion of the surface region, a communicationbus coupled between the electrical silicon chip and the siliconphotonics device, an optical interface coupled to the silicon photonicsdevice, and an electrical interface coupled to the electrical silicondie.

As shown in FIG. 1, the single hybrid die includes a hybrid siliconphotonics device having an electrical circuit for processing andcontrolling a silicon photonics module. In an example, the hybridsilicon photonics device is described in U.S. Pat. No. 8,380,033, in thename of Fang, et al. issued Feb. 19, 2013, hereby incorporated byreference. FIG. 2A shows a simplified block diagram of an exemplaryhybrid silicon photonics device.

In this example, electro-optic device 200 includes a siliconsemiconductor slab including silicon top layer 201, vertical confinementlayer 202 and silicon substrate 203. Alternatively, substrate layer 203may be a diamond substrate, a glass substrate, or any functionalequivalent. Vertical confinement layer 202 may be formed of anydielectric material suitable for confining an optical mode (e.g., layer201 may be a silicon dioxide layer, a silicon nitride layer, or anyfunctionally equivalent insulating layer with a refractive index lowerthan silicon top layer 201).

Device 200 further includes a III-V semiconductor slab including p-typelayer 208, active layer 209 and n-type layer 210 (thereby forming aP-I-N diode). The term “p-type layer,” as used herein, describes a layercomprising a material that has more positive carriers (i.e., holes) thannegative carriers (i.e., electrons). The term “n-type layer,” as usedherein, describes a layer comprising a material that has more negativecarriers than positive carriers.

Alternatively, layer 208 may be an n-type layer, and layer 210 may be ap-type layer. Or, layers 208 and 210 may be n-type layers, while activeregion 209 may include a tunnel junction to convert n-type majoritycarriers to p-type majority carriers. This avoids the associated opticaland microwave loss of p-type materials due to the use of p-dopants.

III-V semiconductor materials have elements that are found in group IIIand group V of the periodic table (e.g., Indium Gallium ArsenidePhosphide, Gallium Indium Arsenide Nitride). The carrier dispersioneffects of III-V based materials may be significantly higher than insilicon based materials for bandgaps closer to the wavelength of thelight being transmitted or modulated, as electron speed in III-Vsemiconductors is much faster than that in silicon. In addition, III-Vmaterials have a direct bandgap which is required for the most efficientcreation of light from electrical pumping. Thus, III-V semiconductormaterials enable photonic operations with an increased efficiency oversilicon for both generating light and modulating the refractive index oflight.

Active layer 209 is of a III-V semiconductor with high electro-opticefficiency, i.e., the absorption coefficient (i.e., the imaginaryportion of the complex refractive index) and the refractive index (i.e.,the real portion of the complex refractive index) of active layer 209 iseasily affected by either the Franz Kheldysh effect if active layer 209comprises bulk material (e.g., intrinsic Indium Gallium ArsenidePhosphide or Indium Aluminum Gallium Arsenide or the Quantum ConfinedStark Effect if active layer 209 comprises multiple quantum wells.

Optical waveguide 250 is formed by ridge 260 (which is “bolded” or“thicker” in the figure for illustrative purposes only), including ridgesides 261 and 262. It is clear that in this embodiment, waveguide 250 isformed by features in the III-V region of device 200 as opposed to beingformed by features in the silicon region of the device, whereinwaveguide is formed by voids included in silicon top region. Thus, thesilicon and III-V regions of device 200 have a greater contact area thandevices in the prior art (where layer 210 was continuously coupled tolayer 201).

Overclad regions 207 may be formed on the device to improve mechanicalstability, and may be of any material used to form vertical confinementlayer 202 or any material with a lower refractive index than layer 208.Overclad regions 207 further provide vertical optical confinement andpassivation as described below. The areas adjacent to ridge sides 261and 262 provide optical confinement if left as voids (i.e., areascomprising air), but that forming overclad regions 207 provides formechanical stability in addition to optical confinement.

Thus, optical mode 213 is vertically confined by vertical confinementlayer 202, ridge 260 and overclad regions 207 while being laterallyconfined by ridge sides 261 and 262. Said ridge sides also confineinjection current from electrode 206 towards the portion of active layer209 that overlaps optical mode 213. The need for the etched regions andimplanted regions is eliminated in the example shown above.

It is understood that the optical device of FIG. 2A may be used toamplify, modulate or detect light transmitted through the opticalwaveguide of the device by applying an electrical difference tocomplimentary electrodes 206 and 212 to either forward bias (i.e., foramplification) or reverse bias (i.e., for modulation or detection) thestructure. The complex refractive index (i.e., at least one of the realand the imaginary refractive index) of at least the portion of activelayer 209 included in optical mode 213 changes based on an electricaldifference (e.g., electrical voltage, electrical field) applied toelectrodes 206 and 212. These changes to the refractive index (orindexes) are proportional to the strength of the electrical differenceapplied to electrodes 206 and 212.

In this example, electrodes 212 are coupled to n-type layer 210. Thus,it is to be understood that there is no electrical conduction throughsilicon top layer 201. As opposed to variations where electricalconduction does occur through the silicon top layer of a device,resistance is high as it determined by thin layer 210; however, thereare less processing steps needed to create device 200 and no conductivebond is required to couple the silicon region with the III-V region(i.e., no conductive bond is required to couple layers 210 and 201).

Other examples of silicon photonic devices are manufactured by IntelCorporation of Santa Clara, Calif., Skorpis Technology, Inc. 5600 EubankBlvd. NE Suite 200, Albuquerque, N.Mex. 87111, Luxtera, Inc. of 2320Camino Vida Roble, Carlsbad, Calif. 92011, Mellanox Technologies, Inc.350 Oakmead Parkway, Suite 100 Sunnyvale, Calif. 94085, and amLightwire, Inc. Headquartered in Allentown, Pa. (now Cisco Systems,Inc., Corporate Headquarters, 170 West Tasman Dr., San Jose, Calif.95134) among others.

FIG. 3 is a simplified diagram of an electrical silicon die blockaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications. In an embodiment, theelectrical silicon die block is an electrical signal processing blockthat connects a low speed electrical interface to a high speed opticalinterface. There are several elements to this block diagram. As shown,the electrical silicon die block includes a high speed serial link 310,a digital signal processing/pre-distortion unit 320, and a lasermodulator driver and TIA unit 330. The high speed serial link 310includes an input/output block having an RX (receiving) functional unitand a TX (transmitting) function unit coupled to a phase lock loopcircuit. For example, the TX function unit drives the loopback signalsthat are processed by the RX functional unit. Using the high speedserial link 310, the data first is able to be converted from the manyparallel streams of lower speed data into a high speed serial stream(there may be more than one such high speed stream depending on thetotal data rate). The digital signal processing/pre-distortion unit 320is configured to process or convert digital electrical signal back andforth to optical signal and conduct all signal modulation, errorencoding/decoding, and signal distortion compensation. The high speedstreams converted by the high speed serial link 310 are then encoded anddigitally compensated to account for distortions in the transmit andreceive paths. The final interface to the optical components is achievedvia the modulator driver (transmit path) and the transimpedanceamplifier (receive path). The laser modulator driver and TIA unit 330 isconfigured to control the optical device (such as the optics siliconphotonics die on the part of the multi-chip module in FIG. 2). In aspecific embodiment, the electrical silicon die block is a single hybriddie as part of the multi-chip module shown in FIG. 2.

FIG. 4 is a simplified diagram of high speed serial link block accordingto an embodiment of the present invention. This diagram is merely anexample, which should not unduly limit the scope of the claims. One ofordinary skill in the art would recognize many variations, alternatives,and modifications. As shown, the high speed serial link block providesdetails of the signal interface between the high speed optical and thelower speed electrical sides. In an embodiment, the high speed seriallink block comprises multiple Bits Flash Samplers 410 and an All digitalSerDes core unit 420 powered under a low Vdd power supply. The samplers410 are part of RX functional unit of the input/output block 310. Theall digital SerDes core unit 420 comprises an all digital phase lockloop (PLL) block 422, a fast lock CDR block 424, and Digital offsetcalibrations and logics block 426, also belonging to the RX functionalunit (310 of FIG. 3). In another embodiment, the high speed serial linkblock is an electrical input/output block provided on either a singlechip or a silicon die of package substrate member and coupled to thedata input/output interface. Some of the essential components of theelectrical input/output block are CDR (clock and data recoverycircuits), PLL (phase lock loops), and SerDes (Serializers andDeserializers). In an example, the input/output block comprises a SerDesblock, a CDR block, a compensation block, and an equalizer block, amongothers. The output of equalizer includes receiver input. These circuitsin combination convert multiple streams of input data (electrical side)to fewer streams of output data (optical side). These circuits also needto be calibrated and controlled to operate correctly.

FIG. 5 is a simplified diagram of a digital processing/signalpre-distortion block according to an embodiment of the presentinvention. This diagram is merely an example, which should not undulylimit the scope of the claims. One of ordinary skill in the art wouldrecognize many variations, alternatives, and modifications. As shown,the digital processing/signal pre-distortion block comprises at least anError Encoding/Decoding block 510, an Optical Distortion/ElectricalCompensation (EDC) block 520, and a Modulation Conversion block 530. Inan example, it shows the details of a possible implementation of theelectronic processing blocks in the transmit and receive paths. In analternative embodiment, some of those blocks may be configureddifferently in the transmit versus the receive path. One of theessential blocks is the Error Encoding/Decoding block 510 which performsdata error control coding. As additional data bits are added to blocksof signal data in such a way that when errors occur they may becorrectable in the receive path. Modern error control codes aresophisticated that they can correct, e.g., up to 1 error in every 100bits with modest data overhead and latency. Optical distortioncompensation block 520 helps compensate for impairments in the opticaland electrical transmission paths. These could include compensation of,e.g., bandwidth limitations and inter-symbol interference. Themodulation conversion block 530 codes and decodes the multi-levelhigher-order modulation signals that are used at the transmitter andreceiver, and converts them to the simple two-level NRZ format used inthe lower speed interfaces.

FIG. 6 is a simplified diagram of an electrical laser driver and TIAblock diagram according to an embodiment of the present invention. Thisdiagram is merely an example, which should not unduly limit the scope ofthe claims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications. As shown, the top partcircuit (A) of an electrical laser driver and TIA block shows a drivercircuit for the modulator and the receiver circuit for a photo diodedetector (to be shown in FIG. 7 below). The electrical output of the topcircuit (A) is used to drive the modulator. The modulator imprints theelectrical signal input on to the optical carrier. The output of thephoto diode detector is the input to the bottom part circuit (B) of theelectrical laser driver and TIA block. This circuit converts the currentsignal from the photo diode detector into a voltage signal which canthen be processed by other circuits. In an example, the electrical laserdriver and TIA block is block 330 included in the electrical silicon dieblock shown in FIG. 3.

FIG. 7 is a simplified diagram of a silicon photonic block diagramaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications. As shown, in an embodiment,a silicon photonic block 700 includes a laser source 710, a lasermodulator 720, a control loop 730, and one or more photo detectors 740.In a specific embodiment, the silicon photonic block 700 includes commonblocks of an optical sub-system including control loops. The transmitpath of the optical sub-system includes a laser source 710 which can beselected from a CW (continuous wave) DFB (distributed feedback) laseramong others. The laser source 710 provides the optical carrier. Theoutput from the laser source 710 is optically coupled into the lasermodulator 720. The electrical data is converted to optical via themodulator for modulating the optical signal directly from the lasersource 710. The modulator 720 may be an electro-absorption modulator ora Mach-Zehnder (MZ) modulator, or others depending on embodiments. Theoutput signal from the modulator 720 is then coupled to a fiber (notshown) for external transmission. The receive path of the opticalsub-system includes the optical signal from the fiber coupled into oneor more photo diode detectors 740. The photo diode detector 740 convertsthe optical data into electrical data. The control loops 730 are neededto correctly bias the laser source 710, the modulator 720, and the oneor more photo diode detectors 740. The bias control signals may includecurrent or voltage outputs used to setup the laser source, modulator,and the photo diode detector correctly. The control output signals mayalso be continually adjusted using the feedback from the devicesthemselves. Optionally, the silicon photonic block 700 includessilicon-based optical mux/demux devices configured to be coupleddirectly with optical fibers. Optionally, the silicon photonic block 700is configured to be a silicon photonics device with all the componentsdescribed herein integrated in a single die. Optionally, the single-diesilicon photonics device is used to couple with other opto-electriccontrol blocks in either single-chip or multi-chip forms in anintegrated system-on-a-chip in the communication network.

FIG. 8 is a simplified block diagram of a multi-chip module for siliconphotonics according to an embodiment of the present invention. As shown,the present invention includes an integrated system-on-chip device. Thedevice is configured on a single silicon substrate member. The devicehas a data input/output interface provided on the silicon substratemember and configured for a predefined data rate and protocol. Thedevice has an input/output block provided on the silicon substratemember and coupled to the data input/output interface. In an example,the input/output block comprises a SerDes block, a CDR block, acompensation block, and an equalizer block, among others. The device hasa signal processing block provided on the silicon substrate member andcoupled to the input/output block. In an example, the signal processingblock is configured to the input/output block using a bi-direction busin an intermediary protocol. The device has a driver module provided onthe silicon substrate member and coupled to the signal processing block.In an example, the driver module is coupled to the signal processingblocking using a uni-directional multi-lane bus. In an example, thedevice has a driver interface provided on the silicon substrate memberand coupled to the driver module and configured to be coupled to asilicon photonics device. In an example, the driver interface isconfigured to transmit output data in either an amplitude modulationformat or a combination of phase/amplitude modulation format or a phasemodulation format. In an example, the device has a receiver modulecomprising a TIA block provided on the silicon substrate member and tobe coupled to the silicon photonics device using predefined modulationformat, and configured to the digital signal processing block tocommunicate information to the input output block for transmissionthrough the data input/output interface. In an example, the device has acommunication block provided on the silicon substrate member andoperably coupled to the input/output block, the digital signalprocessing block, the driver block, and the receiver block, amongothers. The device has a communication interface coupled to thecommunication block. The device has a control block provided on thesilicon substrate member and coupled to the communication block. In aspecific embodiment, the control block is configured to receive and sendinstruction(s) in a digital format to the communication block and isconfigured to receive and send signals in an analog format tocommunicate with the silicon photonics device. In another specificembodiment, the integrated system-on-chip device is a single chip module800.

In an example, the signal processing block comprises a FEC block, adigital signal processing block, a framing block, a protocol block, anda redundancy block, among others. The driver module is selected from acurrent drive or a voltage driver in an example. In an example, thedriver module is a differential driver or the like. In an example, thesilicon photonics device is selected from an electro absorptionmodulator (EAM) or electro optic modulator (EOM), or a Mach-Zehndermodulator (MZM). In an example, the amplified modulation format isselected from NRZ format or PAM format. In an example, the phasemodulation format is selected from BPSK or nPSK. In an example, thephase/amplitude modulation is QAM. In an example, the silicon photonicdevice is configured to convert the output data into an output transportdata in a WDM signal. In an example, the control block is configured toinitiate a laser bias or a modulator bias. In an example, the controlblock is configured for laser bias and power control of the siliconphotonics device. In an example, the control block is configured with athermal tuning or carrier tuning device each of which is configured onthe silicon photonics device. In an example, the SerDes block isconfigured to convert a first data stream of N into a second data streamof M.

FIG. 9 is a simplified block diagram of data flow according to anembodiment of the present invention. As show is a stream of incomingdata, which processed through multiple blocks. The blocks include, amongothers, forward error correction, and other encoding, multi-levelcoding, pre-compression, and digital to analog coding. The blocks alsoinclude non-DSP forward error correction, and a block corresponding to alaser diode or driver, among others. In an example, in the absence of aFEC from a host process, techniques include use of CDR2 type FEC, whichis internal to the CMOS chip. In an example, FEC can be striped acrosseach or all of data lanes. Of course, there can be variations,modifications, and alternatives.

FIG. 10 is a simplified diagram illustrating a redundant laserconfiguration at a drive stage according to an embodiment of the presentinvention. In an example, the invention provides an integratedsystem-on-chip device as a fully redundant system having a redundantlaser or lasers configured for each channel. In an example, the devicehas a plurality of laser devices configured on the silicon photonicsdevice. At least a pair of laser devices is associated with a channeland coupled to a switch to select one of the pair of laser devices to becoupled to an optical multiplexer to provide for a redundant laserdevice. The worst case is to have 2 times total number of wavelengthswith twice in chip size. In an embodiment, the switch is a Mach-ZehnderInterferometer (MZI) switch used to switch between a λ1 and a redundantλ1′. Or it could be a passive coupler. In another embodiment, itpreserves the size of the wavelength multiplexer so that no additional λchannels are needed. Note, the integrated system-on-chip device doesn'thave to operate the redundant λ1′ until needed, therefore no powerconsumption penalty is applied.

FIG. 11 is a simplified diagram illustrating a built-in self test usingan optical loop back according to an embodiment of the presentinvention. As shown are a TX multiplexer and an RX multiplexer for asilicon photonics device. In an example, the present invention providesan integrated system-on-chip device having a self test using a loop backtechnique. In an example, the device has a self-test block provided onthe substrate. In an example, the self test block is configured toreceive a loop back signal from at least one of the digital signalprocessing block, the driver module, or the silicon photonics device. Inan example, the self test block comprises a variable output power switchconfigured to provide a stress receiver test from the loop back signal.Also shown is an isolation switch between RX and TX.

In an example, the present technique allows a loop back test capabilityon the device, which is now a silicon photonic application specificintegrated circuit or a communication system-on-chip device, asdescribed. In an example, the technique is provided for diagnostic andsetup during power up sequence. In an example, an optical tap coupler onthe output side connected to the input side as shown. In an example asshown, x (e.g., <10%) is selected to reduce and/or minimize an impact anoutput power as well an impact at the input power given that input poweris generally much lower than the output power. In an example, to preventcrosstalk in the present loop back path, an isolation switch has beenconfigured as shown. In an example, without the isolation switch thereis undesirably direct crosstalk between the output and input as shown.In an example, about 30 dB isolation is included to prevent coherentcrosstalk. Of course, there can be variations.

FIG. 12 is a simplified diagram illustrating a built-in self testconfigured for optical testing according to an embodiment of the presentinvention. In an example, the present invention provides an integratedsystem-on-chip device having a built-in self test technique. As shownare a TX multiplexer and an RX multiplexer for a silicon photonicsdevice. A broad band source is coupled to each of the multiplexers.Multiple sources can also be included. In an example, the device has aself test block configured on the silicon photonics device and to beoperable during a test operation. In an example, the self test blockcomprises a broad band source configured to emit electromagneticradiation from 1200 nm to 1400 nm or 1500 to 1600 nm to a multiplexerdevice. In an example, the broad band source can be an LED or othersuitable device. The device also includes a self test output configuredto a spectrum analyzer device external to the silicon photonics device.In an example, the technique can be provided during a calibrationprocess. That is, if after calibration, a center λ of each multiplexerchanged, the present technique including built-in light source willquantify or indicate the change in an example. In an example, thebroadband source in silicon photonics is a light source with no opticalfeedback, although there can be variations.

FIG. 13 is a simplified diagram illustrating a variable bias for opticalelements configured in a silicon photonic device according to anembodiment of the present invention. As shown, optical elements,particularly, driver blocks comprising optical modulators, whether theyare EAM's EOM's (which are really MZM's), need a DC bias for operation.The DC bias is a function of λ of operation and also of fabricationtolerances including temperature variations. For different λ ofoperation, the output or absolute transmission will vary with the biasvoltage values. Accordingly, the bias circuitry will have to accommodatethe bias variations. If this not designed correctly, it could end upconsuming a lot of power. In an example, the device has an integratedsystem-on-chip device having a capability selectively adjust eachoptical modulator to accommodate for fabrication tolerances, wavelengthoperation, and/or extinction ratio, among other parameters. The devicehas a single silicon substrate member and a data input/output interfaceprovided on the silicon substrate member and configured for a predefineddata rate and protocol. In an example, the device has an input/outputblock provided on the silicon substrate member and coupled to the datainput/output interface. In an example, the input/output block comprisesa SerDes block, a CDR block, a compensation block, and an equalizerblock, among others. The device has a signal processing block providedon the silicon substrate member and coupled to the input/output block.The signal processing block is configured to the input/output blockusing a bi-direction bus in an intermediary protocol. The device has adriver module provided on the silicon substrate member and coupled tothe signal processing block.

In an example, the driver module is coupled to the signal processingblocking using a uni-directional multi-lane bus. In an example, thedevice has a driver interface provided on the silicon substrate memberand coupled to the driver module and configured to be coupled to asilicon photonics device. In an example, the driver interface isconfigured to transmit output data in either an amplitude modulationformat or a combination of phase/amplitude modulation format or a phasemodulation format. In an example, the device has a receiver modulecomprising a TIA block provided on the silicon substrate member and tobe coupled to the silicon photonics device using predefined modulationformat, and configured to the digital signal processing block tocommunicate information to the input output block for transmissionthrough the data input/output interface. In an example, the device has acommunication block provided on the silicon substrate member andoperably coupled to the input/output block, the digital signalprocessing block, the driver block, and the receiver block, and amongothers. The device has a communication interface coupled to thecommunication block and a control block provided on the siliconsubstrate member and coupled to the communication block.

In an example, the device has a variable bias block configured with thecontrol block. In an example, the variable bias block is configured toselectively tune each of a plurality of laser devices provided on thesilicon photonics device to adjust for at least a wavelength ofoperation, a fabrication tolerance, and an extinction ratio. As shown isa plurality of driver blocks. Each of the driver blocks is coupled to avoltage rail, and is configured with a variable voltage device toselectively tune each of the laser devices. In an example, each of thelaser devices can be configured with an optical modulator(s) such aselectro-absorption modulators, electro-optical modulators, among others,which often couple to a direct current power or bias. In an example, theDC bias is a function of wavelength of operation and also of fabricationtolerances, among other factors. In an example, the present biascircuitry accommodates and/or corrects for any bias variations, whiledesirably controlling power. Of course, there can be variations,modifications, and alternatives.

FIG. 14 is a simplified diagram illustrating wavelength tuningconfigured to silicon photonic device according to an embodiment of thepresent invention. In an example, the present tunable laser uses a setof rings with resonant frequencies that a slightly different. In anexample, the technique uses a Vernier effect to tune the laser over awide frequency range—limited by the bandwidth of the gain region. In anexample, the Vernier desirably would be held in lock with respect to oneanother with a frequency difference Δf. In an example, the techniqueuses a dither frequency on one of the biases (e.g., heater) and lock thering to the maximum transmission of the second ring, although there canbe variations. As shown, resonant combs are generally misaligned, Δf+δ,in an example. When thermally tuned, techniques can be used toselectively align one of the combs to another comb or spatial reference.In an example, to maintain alignment, the technique dithers the signalto one of the rings to do maximum search. Of course, there can bevariations, alternatives, and modifications.

FIG. 15 is a simplified block diagram of a single-chip control devicefor communicating with a silicon photonics device for very short rangeBackplane Ethernet, having a separate TX module and an RX moduleaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications. As shown, the presentinvention includes an integrated device, or simply called “device”hereafter, configured on a single silicon substrate member. The devicehas a data input/output interface provided on a silicon substrate memberand configured for a predefined data rate and protocol. The device hasan input/output block provided on the silicon substrate member andcoupled to the data input/output interface. In an example, theinput/output block comprises a SerDes block, a CDR block, a compensationblock, and an equalizer block, among others. The device has a signalprocessing block also provided on the first silicon substrate member andcoupled to the input/output block. In an example, the signal processingblock is configured to couple with the input/output block using abi-direction bus in an intermediary protocol. Additionally, the devicehas a driver module provided on the same silicon substrate member andcoupled to the signal processing block on the silicon substrate member.In an example, the driver module is coupled to the signal processingblock using a uni-directional multi-lane bus. In an example, the devicehas a driver interface coupled to the driver module and configured to becoupled to a silicon photonics device formed on a separate substratemember. In an example, the driver interface is configured to transmitoutput data in either an amplitude modulation format or a combination ofphase/amplitude modulation format or a phase modulation format.Furthermore, the device has a receiver module comprising a TIA blockprovided on the same silicon substrate member and to be coupled to thesilicon photonics device on the separate substrate member usingpredefined modulation format, and configured to couple with the signalprocessing block to communicate information to the input/output blockfor transmission through the data input/output interface. In an example,the device has a communication block provided on the silicon substratemember and operably coupled to the input/output block, the signalprocessing block, the driver module on the substrate member through PCBtrances, and the receiver module on the silicon substrate member throughalternative PCB trances, among others. The integrated device has acommunication interface coupled to the communication block. In aspecific embodiment, a control block is configured to externally couplewith the integrated device to receive and send instruction(s) in adigital format to the communication block and is configured to receiveand send signals in an analog format to communicate with the siliconphotonics device. In another specific embodiment, the integrated deviceis a single-chip control device 1500.

Referring to FIG. 15, the single-chip control device 1500 includes aninput/output block 1510 comprising a receiving block 1511, atransmitting block 1512, and a first auto-negotiation block 1513; asignal processing block 1520 comprising a first digital Gearbox block1521 and a second digital Gearbox block 1522; a first Crossbar block1551; a second Crossbar block 1552; and a transceiver block 1530comprising a transmit block 1531, a receiver block 1532, and a secondauto-negotiation block 1533. The receiving block 1511 is configured toreceive data signals from a very-short-reach (VSR) network host forhandling data in total 400 Gbps rate. The data signal may be digitallyformatted up to 8 channels with a first data rate of 50 Gbps per lane inPAM-4 format or 25 Gbps per lane in NRZ format. Optionally, a data rateof 25 Gbps in NRZ format can be implemented. The digital data signalsare sent to the first digital Gearbox block 1521. Optionally, the datasignals are provided as a data stream or serials of data streams overtime. The transmitting block 1512 is configured to receive digitalsignals from the second digital logic block 1522 based on incomingcurrent signals from the receiver block 1532 converted from opticalsignals. The transmitting block 1512 generates corresponding analogvoltage signals sent to the VSR host. The input/output block 1510 isconfigured to operate at 50 Gbps in PAM-4 format or optionally at 25Gbps in NRZ format and supports 10-14 dB channel loss. Theauto-negotiation block 1513 in the input/output block 1510 is configuredto allow two devices at either end of a 400/200/100/50/40/25/10/1 Gbpslink to advertise and negotiate the link operational mode, such as thespeed of the link, clock source, and the duplex configuration of half orfull duplex, to the highest common denominator. The input/output block1510 is compatible with IEEE 802.3 KP4, KR4, and KR forchip-to-backplane short range or very short range connection.

The signal processing block 1520 is configured to process both thedigital data signal from the receiving block 1511 to generate an outputdata for the driver module 1531 and process the electrical currentsignal converted from the optical signal by the receiver block 1532 togenerate digital voltage signals for the transmitting block 1512. Thefirst digital Gearbox block 1521 and the second digital Gearbox block1522 comprise a SerDes block configured to convert data streams of Ninto data streams of M. Optionally, the first digital Gearbox block 1521couples to the transmitter block 1531 via a first Crossbar block 1551for driving optical signal transmission and the second digital Gearboxblock 1522 couples to the transmitting block 1512 via a second Crossbarblock 1552 for transmitting Ethernet signals. Referring to FIG. 15, eachof the first Crossbar block 1551 and the second Crossbar block 1552 isan 8×8 Crossbar switch for easy routing the 8 Lanes optical/electricalsignals. Optionally, the digital Gearbox block 1521 includes a M:1 muxdevice, M=2 or 4 or 8. Optionally, the second digital Gearbox block 1522includes a 1:M demux device, M=2, or 4 or 8. Optionally, the signalprocessing block 1520 further comprises a FEC block, an equalizer block,a framing block, a protocol block, an auto-negotiation block, and aredundancy block, among others. Optionally, the FEC block is able toflexibly handle error insertion with variable rate of200/100/50/40/25/10 Gb/s Ethernet speed including Auto-Negotiation (AN)sublayers to negotiate FEC ability. Optionally, the FEC error indicationis made by indicating error through sync bits to the physical codingsublayer (PCS) layers with variable rate of 200/100/50/40/25/10 Gb/s.The digital signal processing block 1520 is configured to have digitaldata processing performance to support >30 dB in any equalizer selectedfrom decision feedback equalizer (DFE), feed-forward equalizer (FFE),and continuous-time linear equalizer (CTLE). Optionally, the signalprocessing block 1520 is compatible for Drive Chip-to-Backplane copperconnection, Optical connection, and Direct Attach Cable (DAC)connection.

Referring to FIG. 15, the transceiver block 1530 This interface isconfigured to operate at 400 Gbps in PAM-4 format and support 35 dBchannel loss with enhanced performance. The driver module 1531 isconfigured to couple with the first digital Gearbox block 1521 toreceive output data using a uni-directional multi-lane bus and furtherto couple with the silicon photonics device on the separate substratethrough a driver interface configured to transmit the output data in anamplitude modulation format, e.g., a PAM-4 format. Optionally, thesilicon photonics device is configured to use a modulator to modulatelaser signals based on the output data in PAM-4 format and a second datarate, that is twice of the first data rate handled in the input/outputblock 1510, to generate an output transport data. Optionally, the outputtransport data are optical signals up to eight WDM wavelengths. Thesilicon photonics device is configured to transmit the WDM opticalsignals to the network via an optical fiber. Optionally, the single-chipcontrol device 1500 on a first die is integrated with the siliconphotonics device on a second die on a same substrate for forming acommunication system-on-a-chip. Optionally, the driver interfaceassociated with the driver module 1531 uses a KR physical link forbackplane Ethernet connector to connect with the silicon photonicsdevice in this system-on-a-chip. Optionally, the driver module 1531 isselected from a current driver in an example or a voltage driver inanother example. In yet another example, the driver module 1531 is adifferential driver or the like. The receiver module 1532 in thesingle-chip control device 1500 is configured to couple to the siliconphotonics device in the system-on-a-chip to receive up to eight opticalsignals using predefined modulation format and convert the opticalsignals to electrical current signals. The receiver module 1532 furtheris configured to couple with the second digital Gearbox block 1522 tocommunicate data information to the transmitting block 1512 of theinput/output block 1510 for transmission through the data input/outputinterface for its network host.

Referring to FIG. 15, the single-chip control device 1500 furtherincludes a communication block 1540 comprising an communicationinterface 1541, a multi-point control firmware unit 1542, a phase lockloop (PLL) 1543. Optionally, the communication interface 1541 is aManagement Data Input/Output (MDIO) interface. Optionally, thecommunication interface 1541 is an I²C-type interface. The phase lockloop 1543 receives one or more reference clock inputs for controllingthe signal input and output.

In some embodiments, the communication block 1540 further includes atest/diagnostics unit 1544 including a general purpose Input/Output portfor communicating Host and Line Loopbacks, a Scan port for supportingboundary scan for Eye-Scan/Histograms, and a test access port with JTAGinterface for pseudorandom binary sequence (PRBS) Gen/Checkers. In someembodiments, the communication block 1540 further includes a powersupply module configured to receive power supplies of a 0.8 V port,1.125 V port. Optionally, the test diagnostics unit 1544 is integratedin the same single-chip control device 1500 with the help of externalsoftware that is run over the MDIO or I²C interface 1541.

Optionally in various applications, the single-chip control device 1500coupled to the silicon photonics device for forming an integratedsystem-on-a-chip. Optionally, the silicon photonics device (e.g., asilicon photonics block 700) includes at least a laser device and amodulator driven by the driver module 1531 to modulate laser signalsbased on the data signals received from the first digital Gearbox block1521. The modulator can be one selected from an electro absorptionmodulator (EAM) or electro optic modulator (EOM), or a Mach-Zehndermodulator (MZM). Optionally, the laser signals are modulated with anamplified modulation format selected from a NRZ format or a PAM format.Optionally, the PAM format is a PAM-4 format. Additionally, the siliconphotonics device includes at least an optical mux/demux device coupledwith optical fibers to send/receive WDM optical signals into/from thenetwork. Optionally, the optical mux/demux device is also based onsilicon. Furthermore, the silicon photonics device includes at least aphoto detector configured to convert the WDM optical signals receivedfrom the network into current signals.

In an alternative aspect, a network system is provided to integrate asingle-chip opto-electrical control device coupled with a siliconphotonics device for receiving optical signals from a fiber-basedcommunication network and converting the optical signals to electricalsignals in digital format to be sent to a copper-based communicationnetwork, and for receiving electric data signals of first data rate fromhost and generating driving control signals to the silicon photonicsdevice to modulate lasers based on the data signals to generate WDMoptical signals with a second data rate twice larger than the first datarate for communicating in the fiber-based communication network.Optionally, the network system is formed as an integratedsystem-on-a-chip device with the single-chip control device 1500 in afirst die coupled with the silicon photonics device in a second die.Optionally, an external control block is coupled to the single-chipcontrol device 1500 via the driver module 1531 for sending the drivingcontrol signals to the silicon photonics device to control the lasermodule therein and receive feedback signals from the silicon photonicsdevice. Optionally, the control block is also integrated together in thesystem-on-a-chip device. In an example, the silicon photonics device isconfigured to convert the output data from the single-chip controldevice into an output transport data in a WDM optical signal. In anexample, the control block is configured to initiate a laser bias or amodulator bias as control signals. In an example, the control block isconfigured for laser bias control and power control of the siliconphotonics device sent through the driver module 1531 via PCB trances. Inan example, the control block is configured with a thermal tuning orcarrier tuning device each of which is configured on the siliconphotonics device.

FIG. 16 is an example of applying the single-chip control device (Vega)of FIG. 15 in a Back plane connection of a network system according toan embodiment of the present invention. This diagram is merely anexample, which should not unduly limit the scope of the claims. One ofordinary skill in the art would recognize many variations, alternatives,and modifications. As shown, the single-chip control device, referred as‘Vega’ and shown in FIG. 15, is disposed between a switch and Back Planevia a KR physical link. Optionally, the single-chip control device isconfigured to be an Ethernet retimer featured with N-channel 50 G ratein PAM-4 modulation format (N is up to 8) in both input end via theswitch and output end coupled to the Back Plane for handling integratedsignal conditioning in crosstalk-impaired high-speed serial links.Optionally, the switch may be configured to couple with, through one ormore communication network modules, a host photonics module having atleast a laser device, a modulator, a photo detector, and an opticalmux/demux device. The Vega single-chip control device may be provided ina separate die with respect to the host photonics module. Optionally,the switch is coupled directly to a host electric module. Alternatively,the Vega single-chip control device is configured to be an Ethernetgearbox with a logic responsible for translating every two channels ofdata signals from the PCS with 25 G in NRZ format into one channel datasignal of 50 G in PAM-4 format to the Back Plane or vice versa. Inanother option, the Vega single-chip control device is simply atransceiver for transmitting/receiving at least one 25 G data signal inNRZ format to/from the Back Plane with at least one 25 G data signal inPAM-4 format or vice versa.

In another aspect, the present invention provides a system and methodused in secure transactions for transferring and configuringpeer-to-peer transactions. Such peer-to-peer transactions can be used ina variety of applications such as digital currency transaction. Adigital currency, e.g., a bitcoin used in Bitcoin, is computationallybrought into existence by an issuer (e.g., a bitcoin is “mined”).Bitcoin is described in particular at www.bitcoin.com. In an embodiment,digital currency can be stored in a system of the present disclosureincluding a virtual cryptographic wallet, (hereinafter “wallet”), i.e.,a software and/or hardware technology to store cryptographic keys andcryptographic currency. For example, digital currency can be purchased(e.g., for U.S. dollars at an ATM or at an exchange), sold (e.g., forgoods and/or services), traded, or exchanged for a different currency orcryptographic currency through the system for transferring andconfiguring peer-to-peer transactions. A sender makes a payment (orotherwise transfers ownership) of digital currency by broadcasting(e.g., in packets or other data structures) a transaction message tonodes on a peer-to-peer network. The transaction message includes thequantity of virtual currency changing ownership (e.g., 4 bitcoins) andthe receiver's (i.e., the new owner's) public key-based address.Transaction messages are sent through the Internet, without the need totrust a third party, so settlements are extremely timely and efficient.

Depending upon different embodiments, one or more of the applicationscan be included, among others. Other types of crypto currencies include,among others, Ethereum, Ripple, Litecoin, Dash: Digital+ cash, NEM,Ethereum Classic, Monero, and Zcash. Further details of theseapplications can be found throughout the present specification and moreparticularly below.

In an embodiment, crypto currencies like bitcoins are virtual entitiesthat are traded on the Internet or world wide network of computers. Theinternet infrastructure over which these transactions occur are publiccloud based. Although the currencies themselves may be protected by acombination of private and public keys, the infrastructure, by thedesign of the public ledger system used by these currencies is an opensystem.

FIG. 17 is a simplified diagram illustrating a cryptocurrency system forcommunicating settlement transactions according to an embodiment of thepresent invention. As shown, the system has a network or cloud basedmarket place, a cryptocurrency miner, a cryptocurrency wallet A, acryptocurrency wallet B, a cryptocurrency ATM (i.e., automated tellermachine), and an external threat which is present to threaten thetransaction, wallet, or user information. Referring to FIG. 17, thereare several three major groups of entities operating in thecryptocurrency marketplace that implementing the system. One group ofentities is miners that “create” these cryptocurrencies following astrictly defined computational protocol. A next group of entities isATM's where the cryptocurrencies may be purchased or exchanged for“real” world currencies and pretty much serve the functions of a realATM. Another group of entities is wallets where the currencies areusually stored. Optionally, the wallets exist at the miners. Optionally,the wallets exist at the ATM's. Of course, there can be othervariations, modifications, and alternatives.

Optionally, the cryptocurrency system has a public ledger that allowsfor trusted peer to peer transactions. In an example, the elements orentities communicate in a peer-to-peer basis without an intermediary,while the transactions are recorded in the public ledger. However, thevery nature of the existing open public ledger associated with cryptocurrencies transaction management is that it is built with a shallowlayer of protocol based on electrical signal encryptions andcommunications, making it vulnerable to external threats, and to thosewho with malicious intents.

FIG. 18 is a schematic diagram illustrating system and method includinga Silicon Photonics based optical module for communicating peer-to-peertransaction according to an embodiment of the present invention.Referring to FIG. 17 and FIG. 18, one or more or all those entitiesrepresenting Miners, ATM's, and Wallets and others like regulatorybodies in the cryptocurrency system are configured to conduct thevarious transactions over the public cloud infrastructure.

Although in general, there are several layers of security protocols inthe networks for peer to peer transaction, in an example, the presentinvention provides an improved and more secured layer of encryptionprotocol of using a Silicon Photonics based optical module for storingprivate key of cryptocurrency Wallet as well as related methods ofperforming real-time transaction with error correction functions. In anexample, the optical module is configured via a plug or other interface,which are almost all composed of optical inter and intra networkconnections, to connect it into the network to become a key component inthe secure peer to peer transactions.

In an embodiment, referring to FIG. 18, the present system and methodincludes a Silicon photonics based optical module as shown. The opticalmodule includes a substrate member and a memory resource formed on thesubstrate member. Optionally, the substrate member includes asilicon-on-insulator (SOA) substrate. The memory resource includes acomputer-readable storage device. Additionally, the optical moduleincludes a cryptocurrency wallet provided on the memory resource. Theoptical module further includes an optical communication block with adirect-to cloud interface. Furthermore, the optical module includes anapplication block to enable a cryptocurrency transaction via thedirect-to-cloud interface. Moreover, the optical module includes anexternal interface connecting the application block to a physical layer.

In an example, the optical module is configured to an optical networkportion of the network, i.e., as one of entities shown in FIG. 17 thatis virtually connected to the cloud. The optical module includes anexternal interface (e.g., a user interface) to establish a link to auser/host via one or more physical layers including servers and/or oneor more switches or routers to receive incoming electrical signals.Optionally, the incoming electrical signals include orders of executinga transaction of cryptocurrency. Optionally, the link is a secured linkfor executing a cryptocurrency transaction. Additionally, the opticalmodule includes an application block coupled to the memory resource toverify information about digital currency in the cryptocurrency walletand private key storage provided on the memory resource. Optionally, theapplication block is configured to initiate any transaction includingpurchase (of using U.S. dollars at an ATM or at an exchange), sold(e.g., for goods and/or services), trade or exchange the (verified)digital currency for a different currency or cryptographic currency. Inan example, the optical module is implemented in an entity as a senderwho issues an order of making a payment (or otherwise transfersownership) of the digital currency in the current cryptocurrency walletthereof. The transaction is to be executed by broadcasting (e.g., interms of digital packets or other data structures) a transaction messageto other entities in the cloud via a peer-to-peer network transaction.Optionally, the transaction message includes the quantity of virtualcurrency changing ownership and the receiver's public key-based address.Optionally, as shown in FIG. 8, the application block is part of asingle chip module including at least a digital signal processor (DSP)configured to analyze the incoming electrical signals. These signalsinclude the transaction message about orders of executing a transactionof cryptocurrency. Then the application block may include a controllerto generate modulation/driving signals based on the incoming electricalsignal carrying this transaction message. Optionally, as shown in FIG.15, the application block is part of a a single-chip control device1500.

Furthermore, the optical module includes an optical communication blockto communicate with other entities in the cloud via a direct-to-cloudinterface. Firstly, as an optical module implemented at a sender entity,the optical communication block includes at least an optical transmitterto be driven by the modulation/driving signal sent from the applicationblock to generate an optical signal based on encryption protocolspredefined for the cryptocurrency transaction. Optionally, the opticalcommunication block includes one or more internal encryption units toencode the transactions optically (encryption included in thetransaction envelope) so that only the intended user can read theenvelope. Optionally, the encryption protocol may be a hardware levelencryption protocol where the intruder physically needs to break intothe encryption unit hardware at both sender and receiver ends to decodethe envelope. The optical transmitter outputs the optical signalcarrying the encrypted transaction envelope to one of other entities inthe cloud via the direct-to-cloud (market) interface. Optionally, theoptical module is configured as a portable device/token that interfacesdirectly with a switch, router or otherwise an appliance in the cloudinfrastructure. It will establish a link between the parties in thetransaction to allow the optical signal to be transmitted through beforethe transaction is communicated. Optionally, the link across thenetwork/cloud with the party or parties that is/are part of thetransaction is through internet. Optionally, the transaction is executedthrough a peer-to-peer network transmission without the need to trust athird party. Optionally, the link needs not be a point to pointprotocol. Multi party protocols are also considered here.

In an example, the optical communication block can serve multiplepurposes including, among others, processing and/or switching opticalsignals (at some are generated for executing cryptocurrencytransactions). Optionally, the optical communication block is based onSilicon photonics technology that integrates all optical componentsincluding at least some of the following: laser, modulator, isolator,circulator, optical multiplexer and de-multiplexer devices,photo-detector, dispersion compensator, polarization rotator/splitter,and others on a substrate member. Optionally, all these opticalcomponents are optimized for cryptocurrency transactions. In the exampleof the optical module implemented in a transmitting entity (e.g., aMiner or a cryptocurrency seller), it is served as a transmitter unitfor sending transaction message through out-going optical signals via apeer-to-peer network. Alternatively, the optical module also can beimplemented in a receiving entity (e.g., a cryptocurrency buyer)including a receiver unit for converting the incoming optical signalscarrying the transaction message to an incoming electrical signal. A DSPin this optical module is configured to analyze the incoming electricalsignal to decrypt the transaction envelope. After the envelope has beendecrypted, the transaction can be decrypted using the private/public keyprotocols stored in the memory resource of this optical module. The DSPalso may generate a feedback signal carrying information of confirmingthe receiver's public key-based address or others related to thecryptocurrency transaction. Further, the optical module may include aforward-error correction (FEC) block coupled to the application block toprocess the incoming electrical signal to generate any error-correctionsignal including bit-error rate (BER). Optionally, the BER detected bythe FEC block is used for signal diagnostics. Optionally, theerror-correction signal may be related to the proposed cryptocurrencytransaction. Furthermore, the optical module includes a controllerconfigured to generate back-channel data based on results from the DSPand the FEC block and be sent the back-channel data via a back-channelback to the optical module at the transmitting entity.

In an embodiment, the Silicon photonics based optical module designedfor conducting cryptocurrency transaction includes an intelligent,portable cryptocurrency interface to the cryptocurrency marketplace.This interface is comprised of a user interface and a market interface.Additionally, the optical module includes internal encryption blocks tofurther encode the transactions optically. Optionally, the encryption isincluded in a transaction envelope so that only the intended user canread the envelope. After the envelope has been decrypted, thetransaction can be decrypted using the private/public key protocols.Optionally, the encryption includes a hardware level encryption protocolwhere the intruder physically needs to break into the encryptionhardware at both ends to decode the envelope. This, of course, providesdoubled security for the cryptocurrency transaction.

In an embodiment, the internal encryption block is configured to provideoptical Quantum Key Generation and Distribution. This is the level ofencryption that is provided in the optical module of the presentdisclosure for secure cryptocurrency transactions. Note, the opticalQuantum Key Generation (QKG) encryption protocol is not part of theprivate key/public key protocol for the cryptocurrency, and pertainsonly to the security of the cryptocurrency transaction. In a specificembodiment, these QKG encryption protocols are implemented incontinuous-variable quantum key distribution (CV-QKD) systems. In anexample, they are like coherent communication systems with a localoscillator for a strict phase reference, and the data is transmitted inthe quadrature phases of the optical signal. Intruders need to tamperwith the local oscillator to break the code. Optionally, anotherencryption protocol implemented in the discrete-variable quantum keydistribution (DV-QKD) system is employed with a highly attenuatedoptical signal in application for pluggable coherent communication,approaching the particle nature of light for encryption.

In an embodiment, the optical module is configured to be a portabledevice/token/pluggable-module that interfaces directly with a switch, arouter, or otherwise an appliance in the cloud infrastructure. Eachoptical module represents each party (a Miner, or a Wallet, or an ATM)connected to the cloud infrastructure. It will establish a link betweenthe parties in the peer-to-peer transaction before the transaction iscommunicated. To establish such an interface, the device first needs toestablish a secure link with the user/host side. It then establishes thelink across the network/cloud with the party or parties that is/are partof the transaction. This needs not be a point to point protocol. Multiparty protocols are also considered here. The same optical module alsoholds the Wallet (and the currency) so that it enables the multi-partytransaction once the link is established. Then, the optical module maybe detached from the host after any transaction and becomesin-accessible to the potential network threat.

In another embodiment, the Silicon photonics based optical modulecomprises a size envisioned to be that of a pluggable module commonlyused for switch and router interfaces, e.g., QSFP, SFF, OSFP, CFP, etc.This is going to be implemented in the optical module product pluggablefor coherent communication with even higher security for thecryptocurrency transaction.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. Therefore, the above description and illustrations should not betaken as limiting the scope of the present invention which is defined bythe appended claims.

What is claimed is:
 1. An optical module for communicating a peer topeer transaction to transmit cryptocurrency, the optical modulecomprising: a substrate member; a memory resource; a cryptocurrencywallet provided on the memory resource; an optical communication blockwith a direct-to-cloud interface for connecting to one or more entitiesin a cloud infrastructure; an application block to enable acryptocurrency transaction via the direct-to-cloud interface; anexternal interface connecting the application block to a physical layer;and internal encryption blocks for encrypting the optical signal usingan optical Quantum Key Generation encryption protocol, wherein theoptical communication block comprises a transmitter unit to generate anoptical signal using a modulation/drive signal generated by theapplication block based on an electrical signal including a transactionmessage about an order of executing a plurality of transactions ofcryptocurrency, and wherein the internal encryption block comprises acontinuous-variable quantum key distribution (CV-QKD) system with alocal oscillator for a strict phase reference and the transactionmessage is transmitted in the quadrature phases of the optical signal.2. The optical module of claim 1 wherein the internal encryption blockcomprises a discrete-variable quantum key distribution (DV-QKD) systemwith the optical signal being highly attenuated.
 3. The optical moduleof claim 1 wherein the internal encryption block comprises a hardwarelevel encryption protocol.
 4. The optical module of claim 1 wherein theoptical signal is transmitted through a link to at least another onenetwork entity for executing a peer to peer transaction ofcryptocurrency, the link being established according to a public keyaddress stored in a second optical module in the another network entity.5. The optical module of claim 4 wherein the link is established via apoint to point protocol.
 6. The optical module of claim 4 wherein thelink is established via multi-party protocols.
 7. The optical module ofclaim 4 wherein the second optical module comprises a receiver unit toconvert the optical signal to a second electrical signal containing anencrypted transaction envelope.
 8. The optical module of claim 7 whereinthe second optical module further comprises a second application blockto decrypt the transaction envelope and a private key to further decryptthe transaction message for completing at least one of the one or moretransactions of cryptocurrency.
 9. The optical module of claim 1 whereinthe direct-to-cloud interface comprises an optical host/clienttermination of each entity, the interface including an optical linkdirectly interfacing with a switch or router or otherwise an appliancein the cloud infrastructure.
 10. The optical module of claim 9 whereinthe external interface comprises an electrical link established betweenthe application block and a user/host at the physical layer before theoptical link between two entities in the transaction of cryptocurrency.11. The optical module of claim 10 further comprising a digital signalprocessor in the application block configured to analyze the electricalsignal to generate a modulation/driving signal and/or a feedback signal.12. The optical module of claim 11 further comprising aforward-error-correction block configured to process the electricalsignal and combine the feedback signal to generate an error-correctionsignal including bit-error rate (BER) used for signal diagnostics. 13.The optical module of claim 12 further comprising a controllerconfigured to generate a back-channel data communicated via aback-channel between two entities in the cloud infrastructure.
 14. Theoptical module of claim 11 wherein the digital signal processor isconfigured to process data packet modulated withmulti-channel-multi-bit-rate of 1×40G, 4×10G, 1×100G, 2×50G, 4×25G, or10×10G and to drive corresponding optical interface for transmitting alaser of 1 wavelength in 40G, or 4 wavelengths in 10G, or 1 wavelengthin 100G, 2 wavelengths in 50G, 4 wavelengths in 25G, or 10 wavelengthsin 10G.
 15. The optical module of claim 1 further comprises a portabledevice having a pluggable form factor selected from qua smallform-factor pluggable (QSFP), small form-factor pluggable (SFF), octalsmall form-factor pluggable (OSFP), and C form-factor pluggable (CFP).16. A method for communicating a peer to peer transaction to transmitcryptocurrency in an optical communication network, the methodcomprising: providing a first silicon photonics based optical moduleassociated with a host having a public key, the first silicon photonicsbased optical module comprising: a substrate member; a memory resource;a cryptocurrency wallet with a first private key provided on the memoryresource; an optical communication block with a direct-to-cloudinterface for connecting to one or more entities in a cloudinfrastructure; an application block to enable a cryptocurrencytransaction via the direct-to-cloud interface; and an external interfaceconnecting the application block to a physical layer; connecting thefirst silicon photonics based optical module to the cloud infrastructureusing the optical communication block via a public key, wherein a secondsilicon photonics based optical module associated with a client isconnected to the cloud infrastructure, the second silicon photonicsbased optical module is substantially the same as the first siliconphotonics based optical module and has a cryptocurrency wallet with asecond private key; transferring an optical signal with information ofthe cryptocurrency transaction with an encrypted envelope from thecryptocurrency wallet in the first silicon photonics based opticalmodule to the cloud infrastructure; receiving the optical signal fromthe cloud infrastructure to decrypt the crypotcurrency transaction viathe public key by the second silicon photonics based optical module; andstoring information of the cryptocurrency transaction into thecryptocurrency wallet in the second silicon photonics based opticalmodule via the second private key.
 17. The method of claim 16 whereinthe optical signal is converted from an electrical signal provided by auser accessed to the first silicon photonics based optical module viathe physical layer and modulated based on a modulation/drive signalgenerated by the application block.